منابع مشابه
Basics of Molecular Beam Epitaxy (MBE)
A brief introduction to the MBE technique is presented with main attention to the elemental source MBE. A discussion on the effusion cell as beam source is shortly given starting from ideal cases to real cells homogeneity problems. A short review regarding the thermodynamic approach to the MBE is pointed out. Focusing on the possibility that, despite the fact that MBE processes occur under stro...
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We have grown GaAsBi quantum wells by molecular beam epitaxy. We have studied the properties of a 7% Bi GaAsBi quantum well and their variation with thermal annealing. High-resolution X-ray diffraction, secondary ion mass spectrometry, and transmission electron microscopy have been employed to get some insight into its structural properties. Stationary and time-resolved photoluminescence shows ...
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Same as Report (SAR) 18. NUMBER
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IConllnv on r...r.. •Idm II n.c....ry and Idtnllly by block numb.r) Thin films ot ZnSe, ZnTe, Zn(SeTe), Cd(SeTe) and CdTe were grown on CdS, CdSe, CaF,, and sapphire substrates by evaporation of the elements under ultra-high vacuum. Substrate chemical polishing techniques were developed:. Elemental and compound evaporation and deposition rates were measured by mass spectrometer, film thickness,...
متن کاملDirect graphene growth on Co3O4(111) by molecular beam epitaxy.
Direct growth of graphene on Co(3)O(4)(111) at 1000 K was achieved by molecular beam epitaxy from a graphite source. Auger spectroscopy shows a characteristic sp(2) carbon lineshape, at average carbon coverages from 0.4 to 3 ML. Low energy electron diffraction (LEED) indicates (111) ordering of the sp(2) carbon film with a lattice constant of 2.5(±0.1) Å characteristic of graphene. Sixfold symm...
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ژورنال
عنوان ژورنال: SHINKU
سال: 1973
ISSN: 0559-8516,1880-9413
DOI: 10.3131/jvsj.16.91